SSF4606 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF4606
30V Complementary MOSFET
DESCRIPTION
The SSF4606 uses advanced trench
technology MOSFET to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
GENERAL FEATURES
●N-Channel
VDS = 30V,ID = 6.9A
RDS(ON) < 42mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=10V
●P-Channel
VDS = -30V,ID = -6A
RDS(ON) < 58mΩ @ VGS=-4.5V
RDS(ON) < 35mΩ @ VGS=-10V
●High Power and current handing capability
●Lead free product
●Surface Mount Package
N-channel P-channel
Schematic Diagram
Marking and pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
4606
SSF4606
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
±20
±20
Continuous Drain Current
TA=25℃
TA=70℃
6.9
-6
ID
6.0
-5.0
Pulsed Drain Current (Note 1)
IDM
30
-30
Maximum Power Dissipation
TA=25℃
TA=70℃
2.0
2.0
PD
1.44
1.44
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150 -55 To 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
N-Ch
62.5
P-Ch
62.5
Unit
V
V
A
A
W
℃
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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