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| SSF4604 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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SSF4604
30V Complementary MOSFET
DESCRIPTION
The SSF4604 uses advanced trench
technology MOSFET to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
GENERAL FEATURES
âN-Channel
VDS = 30V,ID = 6.9A
RDS(ON) < 44mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=10V
âP-Channel
VDS = -30V,ID = -5A
RDS(ON) < 87mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
âHigh Power and current handing capability
âLead free product
âSurface Mount Package
N-channel P-channel
Schematic Diagram
D1 D1 D2 D2
8 7 65
4604
1 2 34
S1 G1 S2 G2
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
4604
SSF4604
SOP-8
Ã330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
N-Channel P-Channel Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current
TA=25â
TA=70â
6.9
-5
ID
A
6.0
-4.0
Pulsed Drain Current (Note 1)
IDM
30
-20
A
Maximum Power Dissipation
TA=25â
TA=70â
2.0
2.0
PD
W
1.35
1.44
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150 -55 To 150
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
RθJA
â/W
P-Ch
62.5
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
www.goodark.com
Page 1 of 4
Rev.1.0
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