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SSF4015_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 40V P-Channel MOSFET | |||
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Main Product Characteristics
VDSS
-40V
RDS(on) 11mΩ (typ.)
ID
ï¼20A
TO-252 (D-PAK)
Features and Benefits
ï® Advanced trench MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® High Power and current handing capability
ï® 175â operating temperature
ï® Lead free product
SSF4015
40V P-Channel MOSFET
SSSSSFF344600113525D
D
G
S
Marking and Pin Schematic Diagram
Assignment
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Pulsed Source Current (Body Diode)â¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Single Pulse Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
-20
-16
-50
-50
75
-40
± 20
40
28
-55 to + 175
Units
A
W
V
V
mJ
A
°C
www.goodark.com
Page 1 of 5
Rev.1.1
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