SSF3N80F Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Main Product Characteristics

Main Product Characteristics
V_DSS
800V
R_DS(on) 3.7Ω (typ.)
I_D
3A
Features and Benefits
TO220F
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF3N80F
800V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=67mH
Avalanche Current @ L=67mH
Operating Junction and Storage Temperature Range
Max.
3
1.9
12
39
0.31
800
± 30
322
3.1
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
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