SSF3639C Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF3639C
30V Complementary MOSFET
DESCRIPTION
The SSF3639C uses advanced trench
technology MOSFET to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
GENERAL FEATURES
●N-Channel
V_DS = 30V,I_D = 6.3A
R_DS(ON) < 35.5mΩ @ V_GS=4.5V
R_DS(ON) < 22mΩ @ V_GS=10V
●P-Channel
V_DS = -30V,I_D = -5A
R_DS(ON) < 87mΩ @ V_GS=-4.5V
R_DS(ON) < 52mΩ @ V_GS=-10V
●High Power and current handing capability
●Lead free product
●Surface Mount Package
N-channel P-channel
Schematic Diagram
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3639C
SSF3639C
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel Unit
Drain-Source Voltage
V_DS
30
-30
V
Gate-Source Voltage
V_GS
±20
±20
V
Continuous Drain Current
T_A=25℃
T_A=70℃
6.3
-5
I_D
A
Pulsed Drain Current (Note 1)
I_DM
20
-20
A
Maximum Power Dissipation
T_A=25℃
T_A=70℃
1.6
2.0
P_D
W
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 150 -55 To 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
R_θJA
℃ /W
P-Ch
62.5
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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