SSF3637_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 30V Dual P-Channel MOSFET

SSF3637
30V Dual P-Channel MOSFET
DESCRIPTION
The SSF3637 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
GENERAL FEATURES
●VDS = -30V,ID = -5A
RDS(ON) < 87mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
D1
D2
G1
G2
S1
S2
Schematic Diagram
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3637
SSF3637
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
Gate-Body Leakage Current
IG SS
VGS=±20V,VDS=0V
Limit
-30
±20
-5
-20
2.0
-55 To 150
Unit
V
V
A
A
W
℃
62.5
℃ /W
Min Typ Max Unit
-30
V
-1
μA
±100 nA
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