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SSF3637S Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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DESCRIPTION
The SSF3637S uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
â VDS =- 30V,ID =-10A
RDS(ON) < 70mΩ @ VGS=-4.5V
RDS(ON) < 45mΩ @ VGS=-10V
â High Power and current handing capability
â Lead free product
â Surface Mount Package
SSF3637S
30V P-Channel MOSFET
D
G
S
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âPWM applications
âLoad switch
âPower management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3637S
SSF3637S
SOP-8
Ã330mm
SOP-8 Top View
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25â)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-6.6
-5.2
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
75
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30
V
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