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SSF3624 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – PWM applications | |||
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SSF3624
30V Dual N-Channel MOSFET
DESCRIPTION
The SSF3624 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
â VDS = 30V,ID =6A
RDS(ON) < 40mΩ @ VGS=4.5V
RDS(ON) < 32mΩ @ VGS=10V
â High Power and current handing capability
â Lead free product
â Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âPWM applications
âLoad switch
âPower management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3624
SSF3624
SOP-8
Ã330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25â)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
6
4.8
30
2
-55 To 150
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30
V
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Page 1 of 4
Rev.1.0
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