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SSF3620_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 30V Dual N-Channel MOSFET | |||
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SSF3620
30V Dual N-Channel MOSFET
DESCRIPTION
The SSF3620 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
â VDS = 30V,ID =7A
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 18.5mΩ @ VGS=10V
â High Power and current handing capability
â Lead free product
â Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âPWM applications
âLoad switch
âPower management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3620
SSF3620
SOP-8
Ã330mm
SOP-8 Top View
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
IDï¼25âï¼
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDï¼70âï¼
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
7
5.8
25
2
-55 To 150
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
Min Typ Max Unit
30
V
1
μA
www.goodark.com
Page 1 of 6
Rev.2.0
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