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SSF3611E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology | |||
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Main Product Characteristics
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID
-12A
Features and Benefits
SOP-8
ï® Advanced trench MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SSF3611E
30V P-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-12
-7.4
-48
2
-30
± 20
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ⤠10s) â£
Typ.
â
Max.
62.5
Units
â/W
www.goodark.com
Page 1 of 5
Rev.1.0
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