SSF3610E_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 25V N-Chanel MOSFET

Main Product Characteristics
V_DSS
25 V
R_DS(on) 6.8 mΩ(typ.)
I_D
18A
SOP-8
Features and Benefits
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF3610E
25V N-Chanel MOSFET
SSF3610E
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
18
72
3.1
25
± 12
-55 to +150
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
40
Units
A
W
V
V
°C
Units
℃/W
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