SSF3605S Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF3605S
30V P-Channel MOSFET
DESCRIPTION
The SSF3605S uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
D
G
S
Schematic Diagram
GENERAL FEATURES
● VDS =-30V,ID =-15A
RDS(ON) < 7.4mΩ @ VGS=-10V
RDS(ON) < 7.0mΩ @ VGS=-20V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3605S
SSF3605S
SOP-8
-
SOP-8 Top View
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±25
-15
-12.8
-80
3
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
℃/W
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