SSF3365 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF3365
30V P-Channel MOSFET
DESCRIPTION
The SSF3365 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
D
G
GENERAL FEATURES
● VDS = -30V,ID = -3A
RDS(ON) < 140mΩ @ VGS=-4.5V
RDS(ON) < 80mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
S
Schematic Diagram
3365
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3365
SSF3365
SOT-23
Ø180mm
SOT-23 Top View
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID（25℃）
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID（70℃）
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-3
-2.5
-12
1.25
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=-24V,VGS=0V
IG SS
VGS=±20V,VDS=0V
Min Typ Max Unit
-30
V
-1
μA
±100
nA
www.goodark.com
Page 1 of 4
Rev.1.0