SSF3314E Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

DESCRIPTION
The SSF3314E uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
GENERAL FEATURES
● VDS = 30V,ID = 8A
RDS(ON) < 39mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4.0V
RDS(ON) < 23mΩ @ VGS=4.5V
RDS(ON) < 18mΩ @ VGS=10V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSF3314E
30V N-Channel MOSFET
Schematic Diagram
Pin Assignment
DFN3×3-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3314E
SSF3314E
DFN3×3-8L
-
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
8
45
1.7
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Min Typ Max Unit
30
V
1
μA
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