SSF32E0E Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

GENERAL FEATURES
● VDS =30V,ID = 0.1A
RDS(ON) < 8Ω @ VGS=4V
RDS(ON) < 13Ω @ VGS=2.5V
ESD Rating：1000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSF32E0E
30V N-Channel MOSFET
Schematic Diagram
APPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and Pin Assignment
SOT-523 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S32E
SSF32E0E
SOT-523
Ø180mm
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
ID (70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
0.1
0.07
0.4
0.2
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
400
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30
V
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