SSF3056C_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 30V Complementary MOSFET

Main Product Characteristics
SSF3056C
30V Complementary MOSFET (Preliminary)
NMOS
PMOS
V_DSS
30V
-30V
R_DS(on) 37mohm(typ.) 68mohm(typ.)
I_D
5A
-4.5A
D1
S1
NMOS
D1
G1
D2
S2
PMOS
D2
G2
DFN2X3-8L
Schematic Diagram
Features and Benefits
 Advanced trench MOSFET process technology
 Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications
 Ultra low on-resistance with low gate charge
 150℃ operating temperature
 Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature
Range
Max.
N-channel P-channel
5
-4.5
4.2
-3.4
18.8
-12.5
2.1
1.8
30
-30
± 12
± 12
-55 to + 150 -55 to + 150
Units
A
W
V
V
°C
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