SSF3051G7 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics
V_DSS
-30V
R_DS(on) 45mohm(typ.)
I_D
-4A
SOT23-6
Features and Benefits:
 Advanced trench MOSFET process technology
 Special designed for buttery protection, load
switching and general power management
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF3051G7
30V P-Channel MOSFET
D
G
Marking and Pin
Assignment
S
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications.
Absolute Max Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±25
-4
-25
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance, Junction-to-Ambient (Note 2)
Thermal Resistance, Junction-to-Case(Note 2)
RθJA
RθJC
75
℃ /W
30
℃ /W
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