SSF3036C Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced Process Technology

Main Product Characteristics
NMOS
PMOS
V_DSS
30V
-30V
R_DS(on) 32.4mohm 61.6mohm
I_D
4A
-3.6A
Features and Benefits
 Advanced Process Technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF3036C
30V Complementary MOSFET
DFN 3x2-8L
Bottom View
N-Channel Mosfet P-Channel Mosfet
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
VGS
PD @TC = 25°C
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current ②
Gate to source voltage
Power Dissipation ③
Operating Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
4①
-3.6 ①
16
-14.4
±12
±12
2.1
1.3
-55 to + 150 -55 to + 150
Units
A
V
W
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 5s) ④
Typ.
—
N-channel
60
Max.
P-Channel
95
Units
℃/W
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Rev.1.0