SSF2N60D2_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 600V N-Channel MOSFET Preliminary

Main Product Characteristics
V_DSS
R_DS(on)
I_D
600V
3.7Ω (typ.)
2A
TO-252
Features and Benefits
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
Max.
2
1.3
8
34
0.27
600
± 30
115
2.52
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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