SSF2816EB Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handling capability

DESCRIPTION
The SSF2816EB uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.75V.
SSF2816EB
20V Dual N-Channel MOSFET
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
● High Power and current handling capability
● Lead free product
● Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
TSSOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2816EB
SSF2816EB
TSSOP-8
Ø330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃ /W
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