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SSF2814E_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 20V Dual N-Channel MOSFET | |||
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DESCRIPTION
The SSF2814E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
SSF2814E
20V Dual N-Channel MOSFET
GENERAL FEATURES
â VDS = 20V,ID = 7A
RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Ratingï¼2000V HBM
â High Power and current handing capability
â Lead free product
â Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âBattery protection
âLoad switch
âPower management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2814E
SSF2814E
TSSOP-8
Ã330mm
TSSOP-8 Top View
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
25
1.5
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
â /W
www.goodark.com
Page 1 of 4
Rev.1.0
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