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| SSF26NS60_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 600V N-Channel MOSFET | |||
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Main Product Characteristics
VDSS
600V
RDS(on) 0.135Ω(typ.)
ID
20A
Features and Benefits
ï® High dv/dt and avalanche capabilities
ï® 100% avalanche tested
ï® Low input capacitance and gate charge
ï® Low gate input resistance
ï® Lead free product
TO-220
SSF26NS60
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF26NS60 series MOSFET is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low RDS (ON), energy
saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.66
600
± 30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.4
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