SSF2649_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 20V Dual P-Channel MOSFET

DESCRIPTION
The SSF2649 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gate drive voltage ratings.
SSF2649
20V Dual P-Channel MOSFET
GENERAL FEATURES
●VDS = -20V,ID = -2.9A
RDS(ON) < 98mΩ @ VGS=-2.5V
RDS(ON) < 58mΩ @ VGS=-4.5V
● High Power and current handling capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
Schematic Diagram
Marking and Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2649
SSF2649
SOP-8
-
SOP-8 Top View
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-7.9
-30
5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
85
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IG SS
VGS=±12V,VDS=0V
Min Typ Max Unit
-20
V
-1
μA
±100 nA
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