SSF2616E Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

DESCRIPTION
The SSF2616E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
SSF2616E
20V Dual N-Channel MOSFET
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2616E
SSF2616E
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
5
25
1.5
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃ /W
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