SSF2429 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

DESCRIPTION
The SSF2429 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = -20V,ID =-5A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 48mΩ @ VGS=-2.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSF2429
20V P-Channel MOSFET
D
G
S
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOT23-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2429
SSF2429
SOT23-6
Ø180mm
Tape Width
8mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-5
-20
1.4
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃ /W
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