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SSF2418E_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 20V Dual N-Channel MOSFET | |||
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SSF2418E
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS
20V
RDS(on) 18mohm(typ.)
ID
6A
Features and Benefits
SOT23-6
ï® Advanced trench MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
ESD
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM)
Operating Junction and Storage Temperature Range
Max.
6
30
1.3
20
± 12
2
-55 to +150
Units
A
W
V
V
KV
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ⤠10s) â£
www.goodark.com
Page 1 of 6
Typ.
â
Max.
95
Units
â/W
Rev.1.4
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