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SSF2418EBK_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 20V Dual N-Channel MOSFET | |||
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DESCRIPTION
The SSF2418EBK uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch. It is
ESD protected.
SSF2418EBK
20V Dual N-Channel MOSFET
GENERAL FEATURES
â VDS = 20V,ID =6A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4.0V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Ratingï¼2000V HBM
â High Power and current handing capability
â Lead free product
â Surface Mount Package
APPLICATIONS
âBattery protection
âLoad switch
âPower management
Schematic Diagram
Marking and Pin Assignment
SOT23-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2418E
SSF2418EBK
SOT23-6
Ã330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
6
30
1.3
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95
â /W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
20
V
www.goodark.com
Page 1 of 4
Rev.1.0
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