SSF2418EBK Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 20V Dual N-Channel MOSFET

DESCRIPTION
The SSF2418EBK uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch. It is
ESD protected.
SSF2418EBK
20V Dual N-Channel MOSFET
GENERAL FEATURES
● VDS = 20V,ID =6A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4.0V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
Schematic Diagram
Marking and Pin Assignment
SOT23-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2418E
SSF2418EBK
SOT23-6
Ø330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
6
30
1.3
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
20
V
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