SSF2341E_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 20V P-Channel MOSFET

Main Product Characteristics
V_DSS
-20V
R_DS(on) 37mΩ (typ.)
I_D
-4A ①
SOT-23
Features and Benefits
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF2341E
20V P-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating @T_A=25℃ unless otherwise specified
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-4 ①
-2.4 ①
-30
1.4
-20
±8
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 7
Typ.
—
Max.
90
Units
°C /W
Rev.1.1