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SSF2318E Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Battery protection | |||
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DESCRIPTION
The SSF2318E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
â VDS = 20V,ID =6.5A
RDS(ON) < 34mΩ @ VGS=1.8V
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Ratingï¼2000V HBM
â High Power and current handing capability
â Lead free product
â Surface Mount Package
SSF2318E
20V N-Channel MOSFET
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âBattery protection
âLoad switch
âPower management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2318E
SSF2318E
SOT-23
Ã330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±8
6.5
30
1.4
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
â /W
www.goodark.com
Page 1 of 4
Rev.1.0
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