SSF2316E Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF2316E
20V Dual N-Channel MOSFET
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4V
RDS(ON) < 23mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
Schematic Diagram
DFN3×3-8L Bottom View
Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2316E
SSF2316E
DFN3×3-8L
-
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
40
1.4
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃ /W
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Rev. 1.0