SSF2306_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – 30V N-Channel MOSFET

DESCRIPTION
The SSF2306 uses advanced trench
technology to provide excellent RDS(ON),
low gate charge and operation with gate
voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 30V,ID = 5A
RDS(ON) < 50mΩ @ VGS=2.5V
RDS(ON) < 35mΩ @ VGS=4.5V
RDS(ON) < 30mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
SSF2306
30V N-Channel MOSFET
D
G
S
Schematic Diagram
Marking and Pin Assignment
D
3
2306
G1
2S
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2306
SSF2306
SOT-23
Ø180mm
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
5
20
1.38
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃ /W
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Rev.1.0