SSF2305 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF2305
20V P-Channel MOSFET
DESCRIPTION
The SSF2305 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.5V. This device is suitable
for use as a load switch or in PWM applications.
D
G
GENERAL FEATURES
● VDS = -20V,ID = -3A
RDS(ON) < 114mΩ @ VGS=-2.5V
RDS(ON) < 89mΩ @ VGS=-4.5V
S
Schematic Diagram
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●PWM applications
●Load switch
●Power management
Marking and Pin Assignment
SOT23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
2305
SSF2305
SOT23
-
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-3
-1.8
-10
1.25
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃ /W
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Rev.1.0