SSF2302 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF2302
20V N-Channel MOSFET
DESCRIPTION
The SSF2302 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● VDS = 20V,ID = 2.4A
RDS(ON) < 115mΩ @ VGS=2.5V
RDS(ON) < 60mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2302
SSF2302
SOT-23
Ø180mm
D
G
S
Schematic Diagram
D
3
2302
G1
2S
Marking and pin Assignment
SOT-23 Top View
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID (70℃)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±8
2.4
1.
7
10
0.9
-55 To 150
140
Unit
V
V
A
A
A
W
℃
℃ /W
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Rev.2.0