MCL4151 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Features
Silicon Epitaxial Planar Diodes
Electrical data identical with the device 1N4151
Micro Melf package
Applications
Extreme fast switches
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12.3 mg
Cathode Band Color: Black
MCL4151
Fast Switching Diode
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Test Condition
t_p= 1 us
V =0
R
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
mounted on epoxy-glass
hard tissue, Fig 4.
35 um copper clad, 0.9m²
copper area per electrode
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Test Condition
I_F=50mA
V_R=50V
V_R=50V, T_j=150^oC
I_R=5uA, t_p/T=0.01, t_p=0.3ms
V_R=0, f=1MHz, V_HF=50mV
I_F=I_R=10mA, i_R=1mΑ
I_F=10mA, V_R=6V,
i_R=0.1x I_R, R_L=100Ω
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
V_RRM
V_R
I_FSM
I_FRM
I
F
I
FAV
P_V
75
V
50
V
2
A
450
mA
200
mA
150
mA
500
mW
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
R_thJA
T_j
T
stg
500
K/W
175
o_C
-65 to +175
o_C
( T =25oC unless otherwise specified )
amb
Symbol
Min.
Typ.
Max.
Unit
V_F
0.88
1.0
V
50
nA
I_R
50
uA
V_(BR)
75
C_D
t_rr
V
2
pF
4
ns
2
664