MBRD6100CT Datasheet, PDF (1/4 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

Features
● Plastic package has underwriters Laboratory
Flammability Classification 94V-0
● Dual rectifier construction, positive center tap
● Metal of silicon rectifier, majority carrier conduction
● Low forward voltage, high efficiency
● Guarding for over voltage protection
MBRD6100CT
Schottky Barrier Rectifier
Reverse Voltage 100 Volts Forward Current 6 Amperes
Package: TO-252(D-PAK)
Mechanical Data
● Case: Epoxy, Molded
● Weight: 0.4grams（approximately）
● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
● Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec
● Shipped 2500 units per reel
Maximum Ratings & Electrical Characteristics
(TA=25℃ unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Maximum DC blocking voltage
VDC
Maximum average forward rectified current at
IF(AV)
Tc=105°C total device per diode
Peak forward surge current 8.3ms single half sine-wave superimposed
IFSM
on rated load per diode
Peak repetitive reverse current per leg at tp=2.0us ,1KHz
IRRM
Voltage rate of change（rated VR）
DV/dt
Operating junction temperature range
TJ
Storage temperature range
TSTG
Maximum instantaneous forward voltage per leg
IF=3A
IF=3A
TC=25℃
VF
TC=125℃
Maximum reverse current per leg at working peak
Reverse voltage
TJ=25℃
IR
TJ=100°C
Thermal Characteristics TA=25℃ unless otherwise noted
Symbol Parameter
TYP（TO-252）
RθJC
Thermal Resistance, Junction to Case per Leg
3.5
RθJA
Thermal Resistance, Junction to Ambient per Leg
62.5
Note：Pulse test:300us pulse width, duty cycle=2%
MBR6100CT
100
100
100
6
3
100
1.0
10000
―55 to+150
―55 to+150
0.76
0.70
50
5
Unit
°C /W
°C /W
UNIT
V
V
V
A
A
A
V/us
°C
°C
V
uA
mA
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2013.12REV.A