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MBRD10200CT Datasheet, PDF (1/4 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER | |||
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MBRD10200CT
Schottky Barrier Rectifier
Reverse Voltage 200 Volts Forward Current 10 Amperes
Features
â Plastic package has underwriters Laboratory
Flammability Classification 94V-0
â Dual rectifier construction, positive center tap
â Metal of silicon rectifier, majority carrier conduction
â Low forward voltage, high efficiency
â Guarding for over voltage protection
Package: TO-252
Mechanical Data
â Case: Epoxy, Molded
â Weight: 0.4grams(approximately)
â Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
â Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec
âShipped 2500 units per reel
Maximum Ratings & Electrical Characteristics
(TA=25â unless otherwise noted)
PARAMETER
TEST
SYMBOL MBRD10200CT
CONDITIONS
Maximum repetitive peak reverse voltage
VRRM
200
Working peak reverse voltage
VRWM
200
Maximum DC blocking voltage
VDC
200
Maximum average forward rectified current at
IF(AV)
10
Tc=105°C total device per diode
5
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Peak repetitive reverse current per leg at tp=2.0us ,1KHz
IRRM
1.0
Voltage rate of change(rated VR)
DV/dt
10000
Operating junction temperature range
TJ
â55 to+150
Storage temperature range
TSTG
â55 to+150
Maximum instantaneous forward voltage per leg
IF=5A TC=25â
VF
IF=5A TC=125â
0.95
0.88
Maximum reverse current per leg at working peak
Reverse voltage
TJ=25â
IR
TJ=100°C
200
15
Thermal Characteristics TA=25â unless otherwise noted
Symbol Parameter
TYP. (TO-252)
RθJC
Thermal Resistance, Junction to Case per Leg
3.5
RθJA
Thermal Resistance, Junction to Ambient per Leg
62.5
Note: Pulse test:300us pulse width, duty cycle=2%
UNIT
V
V
V
A
A
A
V/us
°C
°C
V
uA
mA
Unit
°C /W
°C /W
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2013.12REV.A
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