LS4150 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Features
Silicon Epitaxial Planar Diode
Electrical data identical with the device 1N4150
Quadro Melf package
Applications
High speed switch and general purpose
use in computer and industrial applications
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward current
Average forward current
Power dissipation
Test Condition
t_p= 1 us
V_R = 0
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
V_RRM
V_R
I_FSM
I_F
I_FAV
P_V
50
V
50
V
4
A
600
mA
300
mA
500
mW
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
on PC board
50 mm X 50mm X 1.6mm
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
R_thJA
T_j
T_stg
500
K/W
175
o_C
-65 to +175
o_C
LS4150
Fast Switching Diode
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Test Condition
I_F=1mA
I_F=10mA
I_F=50mA
I_F=100mA
I_F=200mA
V_R=50V
V_R=50V, T_j=150^oC
V_R=0, f=1MHz, V_HF=50mV
I_F=I_R=10 to 100mA,
i_R=0.1x I_R, R_L=100Ω
( T =25oC unless otherwise specified )
amb
Symbol
Min.
Typ.
Max.
Unit
0.54
0.62
0.66
0.74
V_F
0.76
0.82
0.86
V
0.92
0.87
1.0
100
I_R
nA
100
C_D
2.5
pF
t
4
ns
rr
660