LL5711 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation 1N5711 and 1N6263.
LL5711 and LL6263
Small-Signal Diode
Schottky Diodes
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage
Power dissipation (Infinite heatsink)
LL5711
LL6263
Maximum single cycle surge 10 us square wave
Junction temperature
Storage temperature range
V_RRM
P
tot
I_FSM
T_j
T_S
70
60
400 ⁽¹⁾
2.0
125
-55 to +150
Unit
Volts
mW
Amps
o_C
o_C
Electrical Characteristics
(T =25oC unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Reverse breakdown voltage
LL5711
LL6263
V
(BR)R
I_R=10uA
Leakage current
I_R
V_R=50V
Forward voltage drop
V_F
I_F=1.0mA
I_F=15mA
Junction capacitance
C_tot
V_R=0V, f=1MHz
Reverse recovery time
t_rr
I_F=I_R=5mA,
recover to 0.1I_R
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
694
Min.
Typ.
Max.
Unit
70
-
60
-
-
-
Volts
-
-
200
nA
-
-
-
-
0.41
1.0
Volt
-
-
2.2
pF
-
-
1
ns