GROA Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

GROA THRU GROM
SU R FA C E M O U N T G LA SS PA SSIVATED JU N C TIO N
FAST SW ITCHING RECTIFIER
R everse Voltage - 50 to 1000 Volts
Forw ard Current - 1.5 Amperes
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief, ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High temperature soldering:
250 /10 seconds at terminals
Mechanical Data
Case: SMA molded plastic over passivated chip
Terminals: Solder plated solderable per
MIL-STD-750, method 2026
Polarity: Color band denotes cathode band end
Weight: 0.004 ounce, 0.118 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
D IM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
D IM E N S IO N S
in c h e s
M in .
M ax.
M in .
0 .2 1 6
0 .2 2 6
5 .4 8
0 .1 7 6
0 .1 8 2
4 .4 8
0 .0 9 4
0 .1 0 0
2 .4 0
0 .1 7 0
0 .1 7 6
4 .3 3
0 .0 3 9
0 .0 5 5
1 .0 0
0 .0 8 0
0 .0 8 1
2 .0 3
0 .0 6 8
0 .0 8 3
1 .7 2
0 .11 2
0 .11 8
2 .8 5
0 .0 5 7
-
1 .4 4
-
0 .0 1 8
-
0 .0 1 6
-
0 .4 0
0 .1 0 9
0 .11 5
2 .7 7
0 .1 0 5
0 .1 0 7
2 .6 7
0 .0 7 8
0 .0 8 1
2 .0 0
mm
M ax.
5 .7 4
4 .6 3
2 .5 5
4 .4 8
1 .4 0
2 .0 7
2 .1 0
3 .0 0
-
0 .4 5
-
2 .9 3
2 .7 3
2 .0 5
N o te
Symbols GROA GROB GROD GROG GROJ GROK GROM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T_L=100
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
V_RRM
V_RMS
V
DC
I_(AV)
I_FSM
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
1.5
50.0
Maximum instantaneous forward voltage at 1.5A
V_F
1.30
Maximum DC reverse current
at rated DC blocking voltage
TT_AA==12255
I_R
5.0
200.0
Maximum reverse recovery time (Note 1)
T_rr
150
250
Typical junction capacitance (Note 2)
C_J
50.0
Typical thermal resistance (Note 3)
R
R
JA
JL
55.0
18.0
Operating junction and storage temperature range
T_J, T_STG
-55 to +150
Notes:
(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27X0.27” (7.0X7.0mm) copper pad areas
800
1000
560
700
800
1000
500
Units
Volts
Volts
Volts
Amps
Amps
Volts
A
nS
F
/W
1