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GN1A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
GN1A THRU GN1M, GN13
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1300 Volts
Forward Current - 1.0 Ampere
Features
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
High temperature soldering:
260 /10 seconds at terminals
Mechanical Data
Case: SMA molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Indicated by cathode band
Weight: 0.004 ounce, 0.118 gram
D IM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
D IM E N S IO N S
in c h e s
M in .
M ax.
M in .
0 .2 1 6
0 .2 2 6
5 .4 8
0 .1 7 6
0 .1 8 2
4 .4 8
0 .0 9 4
0 .1 0 0
2 .4 0
0 .1 7 0
0 .1 7 6
4 .3 3
0 .0 3 9
0 .0 5 5
1 .0 0
0 .0 8 0
0 .0 8 1
2 .0 3
0 .0 6 8
0 .0 8 3
1 .7 2
0 .11 2
0 .11 8
2 .8 5
0 .0 5 7
-
1 .4 4
-
0 .0 1 8
-
0 .0 1 6
-
0 .4 0
0 .1 0 9
0 .11 5
2 .7 7
0 .1 0 5
0 .1 0 7
2 .6 7
0 .0 7 8
0 .0 8 1
2 .0 0
mm
M ax.
5 .7 4
4 .6 3
2 .5 5
4 .4 8
1 .4 0
2 .0 7
2 .1 0
3 .0 0
-
0 .4 5
-
2 .9 3
2 .7 3
2 .0 5
N o te
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL=100
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
VRRM
VRMS
VDC
I(AV)
IFSM
50
100
200
400
600
800 1000 1300
35
70
140
280
420
560
700
910
50
100
200
400
600
800 1000 1300
1.0
30.0
Maximum instantaneous forward voltage at 1.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
TTAA==12255
IR
Maximum reverse recovery time (Note 1)
Trr
Typical junction capacitance (Note 2)
CJ
Maximum thermal resistance (Note 3)
R JL
1.10
5.0
200.0
2.0
15.0
30.0
Operating and storage temperature range
TJ, TSTG
Notes:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0MHz and applied VR=4.0 volts
(3) 8.0mm2 (0.013mm thick) land areas
-55 to +150
1
Units
Volts
Volts
Volts
Amp
Amps
Volts
A
S
F
/W