GDSSF3611E_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – Main Product Characteristics

Main Product Characteristics:
V_DSS
-30 V
R_DS(on) 10.6 mΩ(typ.)
I_D
-12A
Features and Benefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
GDSSF3611E
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-12
-7.4
-48
2
-30
± 20
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
62.5
Units
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0