GDSSF2300 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – High Power and current handing capability

GDSSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● VDS = 20V,ID = 2.4A
RDS(ON) < 110mΩ @ VGS=2.5V
RDS(ON) < 55mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Application
●Battery protection
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2300
SSF2300
SOT-23
Ø180mm
SOT-23 top view
Marking and pin Assignment
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID (70℃)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±8
2.4
1.
7
10
0.9
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
140
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±8V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Min Typ Max
20
1
±100
0.65 0.95 1.2
Unit
V
μA
nA
V
Suzhou Goodark Electronics Co., Ltd
Version 1.0