ES2AA Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 2.0 AMPS. Super Fast Surface Mount Rectifiers

ES2AA thru ES2MA
Super Fast Surface Mount Rectifiers
Reverse Voltage 50 to 1000 Volts Forward Current 2.0 Amperes
Features
‹ Glass passivated chip
‹ Super fast switching for high efficiency
‹ For surface mounted applications
‹ Low forward voltage drop and high current capability
‹ Low reverse leakage current
‹ Plastic material has UL flammability classification 94V-0
Mechanical Data
‹ Case : Molded plastic
‹ Polarity : Indicated by cathode band
‹ Weight : 0.002 ounce, 0.064 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbols
ES
2AA
ES
ES
ES
2BA 2CA 2DA
ES
2FA
ES
2GA
ES
2JA
ES
ES
2KA 2MA
Units
Maximum repetitive peak reverse voltage
V_RRM
50
100 150 200 300 400 600 800 1000 Volts
Maximum RMS voltage
V_RMS
35
70
105 140 210 280 420 560 700 Volts
Maximum DC blocking voltage
Maximum average forward
rectified current
@T_L=110^oC
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
V_DC
50
100 150 200 300 400 600 800 1000 Volts
I_(AV)
2.0
Amps
I_FSM
50.0
Amps
Maximum instantaneous forward voltage @ 2.0A DC
V_F
Maximum DC reverse current
at rated DC blocking voltage
@ T_J=25^oC
@ T_J=125^oC
I_R
Maximum reverse recovery time (Note 1)
t_rr
0.92
1.25
5.0
350
25
1.7
Volts
uA
uA
nS
Typical junction capacitance (Note 2)
C_J
25
pF
Typical thermal resistance (Note 3)
R_θJL
20
o_C/W
Operating junction temperature range
T_J
-55 to +150
o_C
Storage temperature range
T_STG
-55 to +150
o_C
Notes:
1. Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A
F
R
RR
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead.
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