DR200G Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 utilizing
Flame retardant epoxy molding compound
2.0 ampere operation at T_A=55 with no
thermal runaway
Glass passivated junction in DO-15 package
DR200G THRU DR210G
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 2.0 Amperes
Mechanical Data
Case: Molded plastic, DO-15
Terminals: Axial leads, solderable per
MIL-STD-202, method 208
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.014 ounce, 0.395 gram
D IM E N S IO N S
inches
mm
DIM
Note
Min.
Max.
Min.
Max.
A
0.228
0.299
5.8
7.6
B
0.102
0.142
2.6
3.6
C
0.028
0.034
0.71
0.86
D
1.000
-
25.40
-
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
DR
200G
DR
201G
DR
202G
DR
204G
DR
206G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T_A=55
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
V_RRM
V
RMS
V_DC
I_(AV)
I_FSM
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
2.0
70.0
Maximum forward voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
TT_JJ==12050
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
V_F
I
R
C_J
R _JA
1.1
5.0
300.0
40.0
25.0
Operating and storage temperature range
T_J, T_STG
-55 to +150
Notes:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length P.C.B. mounted
DR
208G
800
560
800
DR
210G
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
A
F
/W
1