BSS138_15 Datasheet, PDF (1/7 Pages) Diodes Incorporated – 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating：1000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
BSS138
50V N-Channel MOSFET
Schematic Diagram
APPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and Pin Assignment
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S138
BSS138
SOT-23
Ø180mm
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
50
±20
0.22
0.18
0.88
0.43
-55 To 175
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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