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BSS138 Datasheet, PDF (1/7 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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GENERAL FEATURES
â VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Ratingï¼1000V HBM
â High Power and current handing capability
â Lead free product
â Surface Mount Package
BSS138
50V N-Channel MOSFET
Schematic Diagram
APPLICATIONS
âDirect Logic-Level Interface: TTL/CMOS
âDrivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
âBattery Operated Systems
âSolid-State Relays
Marking and Pin Assignment
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S138
BSS138
SOT-23
Ã180mm
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
50
±20
0.22
0.18
0.88
0.43
-55 To 175
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
â /W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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Rev.2.2
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