BAV300 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

BAV300 / 301 / 302 / 303
Switching Diode
Features
Silicon Epitaxial Planar Diodes
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
Applications
General purposes
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Peak reverse voltage
Test Condition
Reverse voltage
Forward current
Peak forward surge current
Forward peak current
t_p= 1 s, T_j=25^oC
f=50Hz
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
mounted on epoxy-glass
hard tissue, Fig 4.
35 um copper clad, 0.9m²
copper area per electrode
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Differential forward resistance
Reverse recovery time
Test Condition
I_F=100mA
V_R=50V
V_R=100V
V_R=150V
V_R=200V
T_j=100^oC, V_R=50V
T_j=100^oC, V_R=100V
T_j=100^oC, V_R=150V
T_j=100^oC, V_R=200V
I_R=100uA, t_p/T=0.01, t_p=0.3ms
I_R=100uA, t_p/T=0.01, t_p=0.3ms
I_R=100uA, t_p/T=0.01, t_p=0.3ms
I_R=100uA, t_p/T=0.01, t_p=0.3ms
V_R=0, f=1MHz
I_F=10mA
I_F=I_R=30mA, i_R=3mA, R_L=100Ω
( T =25oC unless otherwise specified )
amb
Part
Symbol
Value Unit
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
V_RRM
V_RRM
V_RRM
V_RRM
V_R
V_R
V_R
V
R
I
F
I_FSM
I_FM
60
V
120
V
200
V
250
V
50
V
100
V
150
V
200
V
250
mA
1
A
625
mA
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
R_thJA
500
K/W
T_j
175
o_C
T
-65 to +175
o_C
stg
Part
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Symbol
V_F
I_R
I_R
I_R
I_R
I_R
I_R
I_R
I_R
V_(BR)
V_(BR)
V_(BR)
V_(BR)
C_D
r_f
t_rr
( T_amb=25^oC unless otherwise specified )
Min.
Typ.
Max.
Unit
1
V
100
nA
100
nA
100
nA
100
nA
15
uA
15
uA
15
uA
15
uA
60
V
120
V
200
V
250
V
1.5
pF
5
Ω
50
ns
654