BAV200 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

Features
Silicon Epitaxial Planar Diodes
Applications
General purposes
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
BAV200 / 201 / 202 / 203
Switching Diode
Absolute Maximum Ratings
Parameter
Peak reverse voltage
Test Condition
Reverse voltage
Forward current
Peak forward surge current
Forward peak current
t_p= 1 s, T_j=25^oC
f=50Hz
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
on PC board
50 mm X 50mm X 1.6mm
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Differential forward resistance
Reverse recovery time
Test Condition
I_F=100mA
V_R=50V
V_R=100V
V_R=150V
V_R=200V
T_j=100^oC, V_R=50V
T_j=100^oC, V_R=100V
T_j=100^oC, V_R=150V
T_j=100^oC, V_R=200V
I_R=100uA, t_p/T=0.01, t_p=0.3ms
I_R=100uA,
t /T=0.01,
p
t_p=0.3ms
I_R=100uA, t_p/T=0.01, t_p=0.3ms
I_R=100uA, t_p/T=0.01, t_p=0.3ms
V_R=0, f=1MHz
I_F=10mA
I_F=I_R=30mA, i_R=3mA, R_L=100Ω
( T =25oC unless otherwise specified )
amb
Part
Symbol
Value Unit
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
V_RRM
V_RRM
V_RRM
V_RRM
V_R
V_R
V_R
V
R
I
F
I_FSM
I_FM
60
V
120
V
200
V
250
V
50
V
100
V
150
V
200
V
250
mA
1
A
625
mA
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
R_thJA
T
j
T
stg
500
K/W
175
o_C
-65 to +175
o_C
Part
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
Symbol
V_F
I_R
I_R
I_R
I_R
I_R
I_R
I_R
I_R
V_(BR)
V
(BR)
V_(BR)
V_(BR)
C_D
r_f
t_rr
( T_amb=25^oC unless otherwise specified )
Min.
Typ.
Max.
Unit
1
V
100
nA
100
nA
100
nA
100
nA
15
uA
15
uA
15
uA
15
uA
60
V
120
V
200
V
250
V
1.5
pF
5
Ω
50
ns
652