BAT42_15 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Small Signal Schottky Diode

Features
For general purpose applications.
These diodes feature very low turn-on voltage and fast
switching. These devices are protected by a PN junction guard
ring against excessive voltage, such as electrostatic dis-
charges
This diode is also available in the MiniMELF case with type
designation LL42 to LL43.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
BAT42 and BAT43
Small-Signal Diode
Schottky Diodes
Maximum Ratings and Thermal Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
Forward continuous current at T_amb=25^oC
Repetitive peak forward Current
at
tp<1s,
δ<0.5,
T =25oC
amb
Surge forward current at t_p<10ms, T_amb=25^oC
Power dissipation ⁽¹⁾ at T_amb=65^oC
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Electrical Characteristics
(T_J=25^oC unless otherwise noted.)
Parameter
V_RRM
I_F
I_FRM
I_FSM
P_tot
R_θJA
T
j
T_amb
T_S
30
200 ⁽¹⁾
500 ⁽¹⁾
4 ⁽¹⁾
200 ⁽¹⁾
300 ⁽¹⁾
125
-65 to +125
-65 to +150
Symbol
Test Condition
Volts
mA
mA
Amps
mW
o_C/W
o_C
o_C
o_C
Min.
Typ.
Reverse breakdown voltage
V_(BR)R
I_R=100uA (pulsed)
30
-
Leakage current
pulse test t_p<300us, δ<2%
I_R
BAT42, 43
Forward voltage
pulse test t_p<300us, δ<2%
BAT42
BAT43
BAT43
V_F
BAT43
V_R=25V
V_R=25V, T_j=100^OC
I_F=200mA
I =10mA
F
I_F=50mA
I_F=2mA
I_F=15mA
-
-
-
-
-
-
-
-
-
-
0.26
-
-
-
Capacitance
C_tot
V_R=1V, f=1MHz
-
7
Reverse recovery time
t_rr
I =10mA, I =10mA,
F
R
I_rr=1mA, R_L=100Ω
-
-
Detection efficiency
η_ν
R_L=15KΩ, C_L=300pF
f=45MHz, V_RF=2V
80
-
Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
680
Max.
-
0.5
100
1.0
0.40
0.65
0.33
0.45
-
5
-
Unit
Volts
uA
Volt
pF
ns
%